| 1 |
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Scalar quantisation of heavy-tailed signals/
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Tsakalides, P
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Institution of Electrical Engineers
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2000
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| 2 |
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Security of the Jan-Tseng integrated schemes for user authentication and access control/
|
He, W-H
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Institution of Electrical Engineers
|
2000
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| 3 |
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SEMICONDUCTOR TECHNOLOGY - 1200V fully implanted JI technology/
|
Hardikar, S
|
Institution of Electrical Engineers]
|
2000
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| 4 |
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SEMICONDUCTOR TECHNOLOGY - 188GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs/
|
Tang, Z
|
Institution of Electrical Engineers]
|
2000
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| 5 |
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SEMICONDUCTOR TECHNOLOGY - 7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates/
|
Simin, G
|
Institution of Electrical Engineers]
|
2000
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| 6 |
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SEMICONDUCTOR TECHNOLOGY - Accumulation mode MOS varactor SPICE model for RFIC applications/
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Rustagi, S C
|
Institution of Electrical Engineers]
|
2000
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| 7 |
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SEMICONDUCTOR TECHNOLOGY - Behaviour of CuInGaSe2 solar cells under light irradiation/
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Yanagisawa, T
|
Institution of Electrical Engineers]
|
2000
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| 8 |
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SEMICONDUCTOR TECHNOLOGY - Demonstration of 4H-SiC power bipolar junction transistors/
|
Luo, Y
|
Institution of Electrical Engineers]
|
2000
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| 9 |
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SEMICONDUCTOR TECHNOLOGY - Direct extraction of LDMOS small signal parameters from off-state measurements/
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Gaddi, R
|
Institution of Electrical Engineers]
|
2000
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| 10 |
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SEMICONDUCTOR TECHNOLOGY - Electrophoretically deposited zinc oxide thick film gas sensor/
|
Hossein-Babaei, F
|
Institution of Electrical Engineers]
|
2000
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| 11 |
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SEMICONDUCTOR TECHNOLOGY - Electro-thermal device and circuit simulation with thermal nonlinearity due to temperature dependent diffusivity/
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Batty, W
|
Institution of Electrical Engineers]
|
2000
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| 12 |
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SEMICONDUCTOR TECHNOLOGY - Evaluation of effective electron velocity in AlGaN/GaN HEMTs/
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Akita, M
|
Institution of Electrical Engineers]
|
2000
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| 13 |
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SEMICONDUCTOR TECHNOLOGY - Fabrication of masks for DUV and EUV lithography using silicide direct-write electron beam lithography process/
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Lavall�e, E
|
Institution of Electrical Engineers]
|
2000
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| 14 |
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SEMICONDUCTOR TECHNOLOGY - Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices/
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Pal, S
|
Institution of Electrical Engineers]
|
2000
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| 15 |
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SEMICONDUCTOR TECHNOLOGY - GaN MESFETs on (111) Si substrate grown by MOCVD/
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Egawa, T
|
Institution of Electrical Engineers]
|
2000
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| 16 |
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SEMICONDUCTOR TECHNOLOGY - High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD/
|
Chung, T
|
Institution of Electrical Engineers]
|
2000
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| 17 |
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SEMICONDUCTOR TECHNOLOGY - High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance/
|
Chiu, H C
|
Institution of Electrical Engineers]
|
2000
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| 18 |
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SEMICONDUCTOR TECHNOLOGY - High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation/
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Maher, H
|
Institution of Electrical Engineers]
|
2000
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| 19 |
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SEMICONDUCTOR TECHNOLOGY - High-voltage GaN pin vertical rectifiers with 2mm thick Hayer/
|
Zhu, T G
|
Institution of Electrical Engineers]
|
2000
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| 20 |
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SEMICONDUCTOR TECHNOLOGY - Improved BSIM3v3 model for RF MOSFET IC simulation/
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Lee, Seonghearn
|
Institution of Electrical Engineers]
|
2000
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