| 621 |
|
Shrinkage-corrected volume holograms based on photopolymeric phase mediafor surface-normal optical interconnects
|
Zhao, C
|
American Institute of Physics
|
1980
|
|
|
|
| 622 |
|
Shunted bicrystal Josephson junctions arrays for voltage standards
|
Klushin, A. M
|
American Institute of Physics
|
1980
|
|
|
|
| 623 |
|
Shunt screening, size effects and I/V analysis in thin-film photovoltaics/
|
Karpov, V G
|
American Institute of Physics
|
2001
|
|
|
|
| 624 |
|
Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
|
Kim, H
|
American Institute of Physics
|
1980
|
|
|
|
| 625 |
|
Si~0~.~8~5Ge~0~.~1~5 oxynitridation in nitric oxide/nitrous oxide ambient/
|
Dasgupta, A
|
American Institute of Physics
|
2003
|
|
|
|
| 626 |
|
Si(100) etching by translational energy controlled atomic chlorine beams
|
Teraoka, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 627 |
|
Si(100)-SiO2 interface properties following rapid thermal processing/
|
O'Sullivan, B J
|
American Institute of Physics
|
2001
|
|
|
|
| 628 |
|
Si~1~-~x~-~yGe~xC~y alloy band structures by linear combination of atomic orbitals
|
Orner, B. A
|
American Institute of Physics
|
1980
|
|
|
|
| 629 |
|
Si~1~-~yC~y/Si(001) gas-source molecular beam epitaxy from Si~2H~6 and CH~3SiH~3: Surface reaction paths and growth kinetics/
|
Foo, Y. L
|
American Institute of Physics
|
2003
|
|
|
|
| 630 |
|
Si~1~-~yC~y/Si(001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy
|
Joelsson, K. B
|
American Institute of Physics
|
1980
|
|
|
|
| 631 |
|
Si~3N~4/Si/In~0~.~0~5Ga~0~.~9~5As/n-GaAs metal-insulator-semiconductor devices
|
Park, D.-G
|
American Institute of Physics
|
1980
|
|
|
|
| 632 |
|
Si and Si/P implants in In~0~.~5Ga~0~.~5P and In~0~.~5Al~0~.~5P
|
Zolper, J. C
|
American Institute of Physics
|
1980
|
|
|
|
| 633 |
|
Si, Be, and C ion implantation in GaAs~0~.~9~3P~0~.~0~7
|
Lee, J. W
|
American Institute of Physics
|
1980
|
|
|
|
| 634 |
|
Si/cap delta layer in GaAs(001): Its effect on the crystal structure androughness of the GaAs cap layer
|
Lucas, N
|
American Institute of Physics
|
1980
|
|
|
|
| 635 |
|
SiC formation at the interface of polyimide Langmuir-Blodgett film and silicon
|
Ji, M
|
American Institute of Physics
|
1980
|
|
|
|
| 636 |
|
SiCN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition
|
Gomez, F. J
|
American Institute of Physics
|
1980
|
|
|
|
| 637 |
|
SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition of GaN
|
Steckl, A. J
|
American Institute of Physics
|
1980
|
|
|
|
| 638 |
|
Sideband instabilities of mixed barotropic/baroclinic waves growing on amidlatitude zonal jet
|
Van der Vaart, P. C. F
|
American Institute of Physics
|
1980
|
|
|
|
| 639 |
|
Sideband optical-optical double resonance Zeeman spectroscopy. III. Analysis of composite lines and selective detection
|
McCarthy, M. C
|
American Institute of Physics
|
1980
|
|
|
|
| 640 |
|
Sideband optical-optical double resonance Zeeman spectroscopy. II. Studies of NiH, PdD, and PtH
|
McCarthy, M. C
|
American Institute of Physics
|
1980
|
|
|
|