| 181 |
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Semiconductor Devices, Materials, and Processing - Postexposure Delay Effect on Linewidth Variation in Base Added Chemically Amplified Resist/
|
Ku, C-Y
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Electrochemical Society
|
2000
|
|
|
|
| 182 |
|
Semiconductor Devices, Materials, and Processing - Precision Resistor Integration into a Submicron Silicided Complementary Metal Oxide Semiconductor Technology/
|
Miles, G L
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Electrochemical Society
|
2000
|
|
|
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| 183 |
|
Semiconductor Devices, Materials, and Processing - Preparation of Thin Dielectric Film for Nonvolatile Memory by Thermal Oxidation of Si-Rich LPCVD Nitride/
|
Wong, H
|
Electrochemical Society
|
2001
|
|
|
|
| 184 |
|
Semiconductor Devices, Materials, and Processing - Properties of Semi-insulating GaAs:Fe Grown by Hydride Vapor Phase Epitaxy/
|
Messmer, E Rodr�uez
|
Electrochemical Society
|
2000
|
|
|
|
| 185 |
|
Semiconductor Devices, Materials, and Processing - Protection of Silicon Wafers from Alkali Contamination during High-Temperature Processing Using Electric Field/
|
Beregovsky, M
|
Electrochemical Society
|
2000
|
|
|
|
| 186 |
|
Semiconductor Devices, Materials, and Processing - Qualitative Prediction of SiO2 Removal Rates during Chemical Mechanical Polishing/
|
Castillo-Mejia, D
|
Electrochemical Society
|
2000
|
|
|
|
| 187 |
|
Semiconductor Devices, Materials, and Processing - Quantitative Analysis of Carbon Distribution in Steel Used for Thermochemical Polishing of Diamond Films/
|
Weima, J A
|
Electrochemical Society
|
2001
|
|
|
|
| 188 |
|
Semiconductor Devices, Materials, and Processing - Quenching of (Cd,Mn,Hg)(Te,Se) Polycrystals by the Hot Isostatic Pressure Method and Crystal Growth/
|
Onodera, K
|
Electrochemical Society
|
2000
|
|
|
|
| 189 |
|
Semiconductor Devices, Materials, and Processing - Quenching of Porous Silicon Photoluminescence by Ammonia Hydrogen Peroxide Mixture/
|
Fukuda, Y
|
Electrochemical Society
|
2000
|
|
|
|
| 190 |
|
Semiconductor Devices, Materials, and Processing - Recovery of Dry-Etch Damage in Gallium-Nitride Schottky Barrier Diodes/
|
Lee, B-H
|
Electrochemical Society
|
2001
|
|
|
|
| 191 |
|
Semiconductor Devices, Materials, and Processing - Recovery of Tungsten from the Exhaust of a Tungsten Chemical Vapor Deposition Tool/
|
Hoornick, N B H Van
|
Electrochemical Society
|
2000
|
|
|
|
| 192 |
|
Semiconductor Devices, Materials, and Processing - Reduction of Oxide Tub Isolation Stress Using a Silicon Nitride Liner/
|
Burkhardt, J J
|
Electrochemical Society
|
2000
|
|
|
|
| 193 |
|
Semiconductor Devices, Materials, and Processing - Removal Efficiency of Metallic Impurities on Various Substrates in HF-Based Solutions/
|
Choi, G-M
|
Electrochemical Society
|
2001
|
|
|
|
| 194 |
|
Semiconductor Devices, Materials, and Processing - Removal of Submicrometer Particles from Silicon Wafer Surfaces Using HF-Based Cleaning Mixtures/
|
Vos, R
|
Electrochemical Society
|
2001
|
|
|
|
| 195 |
|
Semiconductor Devices, Materials, and Processing - Scale-up of a Parallel Plate RF Plasma Etching Reactor by Using Reactive Gas Flow Simulations/
|
Ikegawa, M
|
Electrochemical Society
|
2001
|
|
|
|
| 196 |
|
Semiconductor Devices, Materials, and Processing - Selective Area Chemical Vapor Deposition of Si1-xGex Thin Film Alloys by the Alternating Cyclic Method: A Thermodynamic Analysis. II. The System Si-Ge-Cl-H-Ar/
|
Soman, R
|
Electrochemical Society
|
2000
|
|
|
|
| 197 |
|
Semiconductor Devices, Materials, and Processing - Selective Area Chemical Vapor Deposition of Si1-xGex Thin Film Alloys by the Alternating Cyclic Method: A Thermodynamic Analysis. I. The System Si-Ge-Cl-H/
|
Soman, R
|
Electrochemical Society
|
2000
|
|
|
|
| 198 |
|
Semiconductor Devices, Materials, and Processing - Selective Wafer Bonding by Surface Roughness Control/
|
Gui, C
|
Electrochemical Society
|
2001
|
|
|
|
| 199 |
|
Semiconductor Devices, Materials, and Processing - Si Consumption in Selective Chemical Vapor Deposition of Tungsten Using SiH4 Reduction of WF6/
|
Takahashi, M
|
Electrochemical Society
|
2001
|
|
|
|
| 200 |
|
Semiconductor Devices, Materials, and Processing - Silicon Epitaxial Layer Lifetime Characterization/
|
Park, J E
|
Electrochemical Society
|
2001
|
|
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기사
(471)
