| 201 |
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Semiconductor Devices, Materials, and Processing - Silicon Float Zone Process with a Weak Transverse Magnetic Field and Crystal Rotation/
|
Ma, N
|
Electrochemical Society
|
2000
|
|
|
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| 202 |
|
Semiconductor Devices, Materials, and Processing - Silicon-on-Insulator MOSFET Structure for Sub-100 nm Channel Regime and Performance Perspective/
|
Omura, Y
|
Electrochemical Society
|
2001
|
|
|
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| 203 |
|
Semiconductor Devices, Materials, and Processing - Simulation of Particle Adhesion - Implications in Chemical Mechanical Polishing and Post Chemical Mechanical Polishing Cleaning/
|
Cooper, K
|
Electrochemical Society
|
2001
|
|
|
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| 204 |
|
Semiconductor Devices, Materials, and Processing - SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors/
|
Johnson, J W
|
Electrochemical Society
|
2001
|
|
|
|
| 205 |
|
Semiconductor Devices, Materials, and Processing - Spectroscopic Investigations of Borosilicate Glass and Its Application as a Dopant Source for Shallow Junctions/
|
Nolan, M
|
Electrochemical Society
|
2000
|
|
|
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| 206 |
|
Semiconductor Devices, Materials, and Processing - Stability of Advanced Photoresist Systems for Subquarter Micrometer Lithography during Reactive Ion Etch Processes/
|
Naeem, M D
|
Electrochemical Society
|
2001
|
|
|
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| 207 |
|
Semiconductor Devices, Materials, and Processing - Studies on Ruthenium-Doped InP Growth by Low-Pressure Hydride Vapor-Phase Epitaxy/
|
S�derstr�m, D
|
Electrochemical Society
|
2001
|
|
|
|
| 208 |
|
Semiconductor Devices, Materials, and Processing - Suppression of Si Cavities at the SiC/Si Interface during Epitaxial Growth of 3C-SiC on Silicon-on-Insulator/
|
M�ller, H
|
Electrochemical Society
|
2001
|
|
|
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| 209 |
|
Semiconductor Devices, Materials, and Processing - Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma/
|
Kanetsuna, T
|
Electrochemical Society
|
2001
|
|
|
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| 210 |
|
Semiconductor Devices, Materials, and Processing - Surface Chemical Treatment for the Cleaning of AIN and GaN Surfaces/
|
Lee, K N
|
Electrochemical Society
|
2000
|
|
|
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| 211 |
|
Semiconductor Devices, Materials, and Processing - Surface Chemistry Studies of Copper Chemical Mechanical Planarization/
|
Hernandez, J
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Electrochemical Society
|
2001
|
|
|
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| 212 |
|
Semiconductor Devices, Materials, and Processing - Surface Damage in Silicon Substrates after the SiCl4 Dry Etch of a Poly-Si Film/
|
Susi, E
|
Electrochemical Society
|
2001
|
|
|
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| 213 |
|
Semiconductor Devices, Materials, and Processing - Surface, Pore Morphology, and Optical Properties of Porous 4H-SiC/
|
Zangooie, S
|
Electrochemical Society
|
2001
|
|
|
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| 214 |
|
Semiconductor Devices, Materials, and Processing - Surface-Processing-Enhanced Copper Diffusion into Fluorosilicate Glass/
|
Tsui, B-Y
|
Electrochemical Society
|
2001
|
|
|
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| 215 |
|
Semiconductor Devices, Materials, and Processing - Surface Residue Island Nucleation in Anhydrous HF/Alcohol Vapor Processing of Si Surfaces/
|
Carter, R J
|
Electrochemical Society
|
2000
|
|
|
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| 216 |
|
Semiconductor Devices, Materials, and Processing - Surface Segregation of Al of the Bilayers of Pure Cu and Cu-Al Alloy Films/
|
Wang, P I
|
Electrochemical Society
|
2001
|
|
|
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| 217 |
|
Semiconductor Devices, Materials, and Processing - Synthesis of Gd1-xEuxAl3(BO3)4 (0 < x <= 1) and Its Photoluminescence Properties under UV and Vacuum Ultraviolet Regions/
|
Wang, Y
|
Electrochemical Society
|
2001
|
|
|
|
| 218 |
|
Semiconductor Devices, Materials, and Processing - Technology to Reduce the Aperture Size of Microfabricated Silicon Dioxide Aperture Tips/
|
Vollkopf, A
|
Electrochemical Society
|
2001
|
|
|
|
| 219 |
|
Semiconductor Devices, Materials, and Processing - Temperature Coefficient of Resistivity in Heavily Doped Oxygen-Rich Polysilicon/
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Rydberg, M
|
Electrochemical Society
|
2001
|
|
|
|
| 220 |
|
Semiconductor Devices, Materials, and Processing - The Application of Ozone in Semiconductor Cleaning Processes - The Solubility Issue/
|
Smedt, F De
|
Electrochemical Society
|
2001
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