| 121 |
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Semiconductor Devices, Materials, and Processing - Etch Characteristics of Cr by Using Cl2/O2 Gas Mixtures with Electron Cyclotron Resonance Plasma/
|
Kang, S-Y
|
Electrochemical Society
|
2001
|
|
|
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| 122 |
|
Semiconductor Devices, Materials, and Processing - Evaluation of Oxalyl Fluoride for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool/
|
Karecki, S
|
Electrochemical Society
|
2001
|
|
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| 123 |
|
Semiconductor Devices, Materials, and Processing - Evolution of the Cu-Al Alloy/SiO2 Interfaces during Bias Temperature Stressing/
|
Wang, P I
|
Electrochemical Society
|
2001
|
|
|
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| 124 |
|
Semiconductor Devices, Materials, and Processing - Excimer Laser Annealing Effect on Nickel-Induced Crystallized Polycrystalline Silicon Film/
|
Park, K-C
|
Electrochemical Society
|
2001
|
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|
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| 125 |
|
Semiconductor Devices, Materials, and Processing - Expanding the Process Window and Reducing the Optical Proximity Effect by Post-Exposure Delay/
|
Ku, C-Y
|
Electrochemical Society
|
2001
|
|
|
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| 126 |
|
Semiconductor Devices, Materials, and Processing - Factors Affecting Passivation of Cu(Mg) Alloy Films/
|
Lee, W
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Electrochemical Society
|
2000
|
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|
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| 127 |
|
Semiconductor Devices, Materials, and Processing - Fingering Instability and Maximum Radius at High Rotational Bond Number/
|
Wang, M-W
|
Electrochemical Society
|
2001
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|
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| 128 |
|
Semiconductor Devices, Materials, and Processing - Finite Difference Analysis of Radial Phosphorus Dopant Distribution in Czochralski-Grown Silicon Single Crystals/
|
Sugawara, K
|
Electrochemical Society
|
2001
|
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|
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| 129 |
|
Semiconductor Devices, Materials, and Processing - Fluctuation Model of Chemical Mechanical Planarization/
|
Sukharev, V
|
Electrochemical Society
|
2001
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|
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| 130 |
|
Semiconductor Devices, Materials, and Processing - Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation - Process Control Using FTIR Spectroscopy/
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Katsidis, C C
|
Electrochemical Society
|
2001
|
|
|
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| 131 |
|
Semiconductor Devices, Materials, and Processing - Formation of SiC SOI Structures by Direct Growth on Insulating Layers/
|
Chen, J
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Electrochemical Society
|
2000
|
|
|
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| 132 |
|
Semiconductor Devices, Materials, and Processing - GaAs Etch Rate Enhancement with SF6 Addition to BCl3 Plasmas/
|
Nordheden, K J
|
Electrochemical Society
|
2000
|
|
|
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| 133 |
|
Semiconductor Devices, Materials, and Processing - Galvanic Effects in the Etching of Semiconductor p/n Structures/
|
Ven, J van de
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Electrochemical Society
|
2001
|
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|
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| 134 |
|
Semiconductor Devices, Materials, and Processing - Gaseous Impurities in Co Silicidation- Impact and Solutions/
|
Li, H
|
Electrochemical Society
|
2001
|
|
|
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| 135 |
|
Semiconductor Devices, Materials, and Processing - Growth and Characterization of SiC/SiNx/Si Structures/
|
Nahm, K S
|
Electrochemical Society
|
2001
|
|
|
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| 136 |
|
Semiconductor Devices, Materials, and Processing - Heat Capacity of 4H-SiC Determined by Differential Scanning Calorimetry/
|
Hitova, L
|
Electrochemical Society
|
2000
|
|
|
|
| 137 |
|
Semiconductor Devices, Materials, and Processing - Highly Selective Photoresist Ashing by Addition of Ammonia to Plasma Containing Carbon Tefrafluoride/
|
Saito, M
|
Electrochemical Society
|
2001
|
|
|
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| 138 |
|
Semiconductor Devices, Materials, and Processing - Hydroxyl Radical Formation in H2O2-Amino Acid Mixtures and Chemical Mechanical Polishing of Copper/
|
Hariharaputhiran, M
|
Electrochemical Society
|
2000
|
|
|
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| 139 |
|
Semiconductor Devices, Materials, and Processing - Improvement of Post-Chemical Mechanical Planarization Characteristics on Organic Low k Methylsilsesquioxane as Intermetal Dielectric/
|
Liu, P-T
|
Electrochemical Society
|
2000
|
|
|
|
| 140 |
|
Semiconductor Devices, Materials, and Processing - Improvement on the Reliability of Flash EEPROM by Annealing after Self-Aligned Source Dry Etching/
|
Park, S-W
|
Electrochemical Society
|
2001
|
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기사
(471)
