| 181 |
|
Semiconductors I: Bulk - Energy-band structure of GaAs and Si: A sps* k.p method (5 pages)/
|
Cavassilas, Nicolas
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
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| 182 |
|
Semiconductors I: Bulk - ESR and optical evidence for a Ni vacancy center in CVb diamond/
|
Iakoubovskii, K
|
Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
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| 183 |
|
Semiconductors I: Bulk - Evidence of metastability with athermal ionization from defect clusters in ion-damaged silicon/
|
Giri, P K
|
Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
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| 184 |
|
Semiconductors I: Bulk - Exact-exchange-based quasiparticle calculations/
|
Aulbur, Wilfried G
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Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
|
| 185 |
|
Semiconductors I: Bulk - Excitation dynamics in single molecular crystals of a-hexathiophene from femtoseconds to milliseconds (12 pages)/
|
Frolov, S V
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
|
| 186 |
|
Semiconductors I: Bulk - Excitation properties of hydrogen-related photoluminescence in 6H-SiC/
|
Egilsson, T
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Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
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| 187 |
|
Semiconductors I: Bulk - Feasibility of optically detected cyclotron resonance to study electron mobility in ultrapure GaAs/
|
Kozhevnikov, M
|
Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
|
| 188 |
|
Semiconductors I: Bulk - Fermi surface properties of low-concentration CexLa1-xB6: de Haas-van Alphen/
|
Teklu, A A
|
Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
|
| 189 |
|
Semiconductors I: Bulk - First-principles study of Si34-xGex clathrates: Direct wide-gap semiconductors in Si-Ge alloys/
|
Moriguchi, Koji
|
Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
|
| 190 |
|
Semiconductors I: Bulk - Force constant change upon isotopic substitution of hydrogen for deuterium (6 pages)/
|
Biernacki, S W
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
|
| 191 |
|
Semiconductors I: Bulk - Formation of defect complexes by electron-irradiation of hydrogenated crystalline silicon (7 pages)/
|
Suezawa, Masashi
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
|
| 192 |
|
Semiconductors I: Bulk - Free excitons in wurtzite GaN (19 pages)/
|
Rodina, A V
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
|
| 193 |
|
Semiconductors I: Bulk - Frenkel pairs on the two sublattices of ZnTe/
|
Uftring, S J
|
Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
|
| 194 |
|
Semiconductors I: Bulk - Ground and doubly excited states of two-dimensional D- centers (10 pages)/
|
Ruan, W Y
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
|
| 195 |
|
Semiconductors I: Bulk - Hole conductivity and compensation in epitaxial GaN:Mg layers/
|
Kaufmann, U
|
Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
|
| 196 |
|
Semiconductors I: Bulk - Hydrogen-related complexes formed by electron-irradiation of hydrogenated silicon (6 pages)/
|
Suezawa, Masashi
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
|
| 197 |
|
Semiconductors I: Bulk - Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers (8 pages)/
|
Oila, J
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
|
| 198 |
|
Semiconductors I: Bulk - Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO (7 pages)/
|
Zhang, S B
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
|
| 199 |
|
Semiconductors I: Bulk - Irradiation-induced defects in Ge studied by transient spectroscopies/
|
Fage-Pedersen, J
|
Published for the American Physical Society by the American Institute of Physics
|
2000
|
|
|
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| 200 |
|
Semiconductors I: Bulk - Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy/
|
Ling, C C
|
Published for the American Physical Society by the American Institute of Physics
|
2000
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기사
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