| 301 |
|
Ambipolar diffusion length and photoconductivity measurements on "midgap" hydrogenated microcrystalline silicon
|
Goerlitzer, M
|
American Institute of Physics
|
1980
|
|
|
|
| 302 |
|
Ambipolar magnetic fluctuation-induced heat transport in toroidal devices
|
Terry, P. W
|
American Institute of Physics
|
1980
|
|
|
|
| 303 |
|
Amino groups in nucleic acid bases, aniline, aminopyridines, and aminotriazine are nonplanar: Results of correlated ab initio quantum chemical calculations and anharmonic analysis of the aniline inversion motion
|
Bludsky, O
|
American Institute of Physics
|
1980
|
|
|
|
| 304 |
|
Ammonia adsorption on MgO(100): A density functional theory study
|
Nakajima, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 305 |
|
Amorphization and crystallization in high-dose Zn^+-implanted silicon
|
Kalitzova, M
|
American Institute of Physics
|
1980
|
|
|
|
| 306 |
|
Amorphization and defect recombination in ion implanted silicon carbide
|
Grimaldi, M. G
|
American Institute of Physics
|
1980
|
|
|
|
| 307 |
|
Amorphization induced by ion mixing in Fe-Mo multilayered films: Correlation with the number of metal layers
|
Zhang, Z. J
|
American Institute of Physics
|
1980
|
|
|
|
| 308 |
|
Amorphous {100} platelet formation in (100) Si induced by hydrogen plasma treatment
|
Hwang, K.-H
|
American Institute of Physics
|
1980
|
|
|
|
| 309 |
|
Amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition at filament temperatures between 1500 and 1900 �
|
Brogueira, P
|
American Institute of Physics
|
1980
|
|
|
|
| 310 |
|
Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics
|
Endo, K
|
American Institute of Physics
|
1980
|
|
|
|
| 311 |
|
Amorphous films formed by solid-state reaction in an immiscible Y-Mo system and their structural relaxation
|
Chen, Y. G
|
American Institute of Physics
|
1980
|
|
|
|
| 312 |
|
Amorphous KNbO~3 thin films with ferroelectriclike properties
|
Xiao, R. F
|
American Institute of Physics
|
1980
|
|
|
|
| 313 |
|
Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition
|
Chang, K.-M
|
American Institute of Physics
|
1980
|
|
|
|
| 314 |
|
Amorphous magnetic films produced by pulsed laser deposition
|
Nikitin, P. I
|
American Institute of Physics
|
1980
|
|
|
|
| 315 |
|
Amorphous (Mo, Ta, or W)-Si-N diffusion barriers for Al metallizations
|
Reid, J. S
|
American Institute of Physics
|
1980
|
|
|
|
| 316 |
|
Amphoteric behavior and precipitation of Ge dopants in InP
|
Kin Man Yu
|
American Institute of Physics
|
1980
|
|
|
|
| 317 |
|
Amphoteric native defect reactions in Si-doped GaAs
|
Nguyen Hong Ky
|
American Institute of Physics
|
1980
|
|
|
|
| 318 |
|
Amphoteric properties of substitutional carbon impurity in GaN and AIN
|
Boguslawski, P
|
American Institute of Physics
|
1980
|
|
|
|
| 319 |
|
A~n^(^1^) Toda solitons and the dressing symmetry
|
Belich, H
|
American Institute of Physics
|
1980
|
|
|
|
| 320 |
|
An ab initio analytical potential energy surface for the O(^3P) + CS(X ^1�+) - >CO(X ^1�+) + S(^3P) reaction useful for kinetic and dynamical studies
|
Gonzalez, M
|
American Institute of Physics
|
1980
|
|
|
|