| 801 |
|
Atomic layer epitaxial predeposition for GaAs growth on Si
|
Das, U
|
American Institute of Physics
|
1980
|
|
|
|
| 802 |
|
Atomic layer epitaxy of CdTe and MnTe
|
Hartmann, J. M
|
American Institute of Physics
|
1980
|
|
|
|
| 803 |
|
Atomic layer graphoepitaxy for single crystal heterostructures
|
Wallis, D. J
|
American Institute of Physics
|
1980
|
|
|
|
| 804 |
|
Atomic level stress and light emission of Ce activated SrS thin films
|
Warren, W. L
|
American Institute of Physics
|
1980
|
|
|
|
| 805 |
|
Atomic magnetic moments and spin notion
|
Oudet, X
|
American Institute of Physics
|
1980
|
|
|
|
| 806 |
|
Atomic migration in Ni-Co ferrite
|
Chul Sung Kim
|
American Institute of Physics
|
1980
|
|
|
|
| 807 |
|
Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio
|
Kimura, K
|
American Institute of Physics
|
1980
|
|
|
|
| 808 |
|
Atomic origin of deep levels in p-type GaN: Theory
|
Chadi, D. J
|
American Institute of Physics
|
1980
|
|
|
|
| 809 |
|
Atomic resolution x-ray hologram
|
Xu, G
|
American Institute of Physics
|
1980
|
|
|
|
| 810 |
|
Atomic-scale nature of the (3 x 3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy
|
Gwo, S
|
American Institute of Physics
|
1980
|
|
|
|
| 811 |
|
Atomic-scale structure and electronic properties of GaN/GaAs superlattices
|
Goldman, R. S
|
American Institute of Physics
|
1980
|
|
|
|
| 812 |
|
Atomic scale study of the interaction between misfit dislocations at theGaAs/Si interface
|
Vila, A
|
American Institute of Physics
|
1980
|
|
|
|
| 813 |
|
Atomic steps on a silicon (001) surface tilted toward an arbitrary direction
|
Zhong, L
|
American Institute of Physics
|
1980
|
|
|
|
| 814 |
|
Atomic stress isobaric scaling for systems subjected to holonomic constraints
|
Melchionna, S
|
American Institute of Physics
|
1980
|
|
|
|
| 815 |
|
Atomic structure of the CdTe(001) C(2x2) reconstructed surface: A grazing incidence x-ray diffraction study
|
Veron, M. B
|
American Institute of Physics
|
1980
|
|
|
|
| 816 |
|
Atomistic calculations of defects in ZnGeP~2
|
Zapol, P
|
American Institute of Physics
|
1980
|
|
|
|
| 817 |
|
Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
|
Jaraiz, M
|
American Institute of Physics
|
1980
|
|
|
|
| 818 |
|
Atomistic simulation of point defects in silicon at high temperature
|
Sinno, T
|
American Institute of Physics
|
1980
|
|
|
|
| 819 |
|
Atomistic studies of O~2 dissociation on Pt(111) induced by photons, electrons, and by heating
|
Stipe, B. C
|
American Institute of Physics
|
1980
|
|
|
|
| 820 |
|
Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots
|
Wu, W
|
American Institute of Physics
|
1980
|
|
|
|