| 21 |
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AlGaAs hot-electron optical modulator/
|
Ryvkin, B S
|
American Institute of Physics
|
2000
|
|
|
|
| 22 |
|
Aligned CNx nanotubes by pyrolysis of ferrocene/C60 under NH3 atmosphere/
|
Han, Wei-Qiang
|
American Institute of Physics
|
2000
|
|
|
|
| 23 |
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Alkaline metal-doped n-type semiconducting nanotubes as quantum dots/
|
Kong, Jing
|
American Institute of Physics
|
2000
|
|
|
|
| 24 |
|
All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer/
|
Ko, Hyun-Chul
|
American Institute of Physics
|
2000
|
|
|
|
| 25 |
|
Alternating current conduction behavior of excimer laser ablated SrBi2Nb2O9 thin films/
|
Bhattacharyya, S
|
American Institute of Physics
|
2000
|
|
|
|
| 26 |
|
ALUMINUM ABUNDANCES, DEEP MIXING, AND THE BLUE-TAIL SECOND-PARAMETER EFFECT IN THE GLOBULAR CLUSTERS M3 AND M13/
|
Cavallo, Robert M
|
American Institute of Physics
|
2000
|
|
|
|
| 27 |
|
Aluminum and GaN contacts on Si(111) and sapphire/
|
Zhao, Z M
|
American Institute of Physics
|
2000
|
|
|
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| 28 |
|
Aluminum impurities in silicon: Investigation of x-ray Raman scattering in total reflection x-ray fluorescence spectroscopy/
|
Baur, K
|
American Institute of Physics
|
2000
|
|
|
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| 29 |
|
Aluminum-seeded growth of microcrystalline Si thin film onto SnO2 substrate/
|
Lee, Chang Hyun
|
American Institute of Physics
|
2000
|
|
|
|
| 30 |
|
Amorphic diamond/silicon semiconductor heterojunctions exhibiting photoconductive characteristics/
|
Davanloo, F
|
American Institute of Physics
|
2000
|
|
|
|
| 31 |
|
Amorphization and anisotropic fracture dynamics during nanoindentation of silicon nitride: A multimillion atom molecular dynamics study/
|
Walsh, Phillip
|
American Institute of Physics
|
2000
|
|
|
|
| 32 |
|
Amplification of picosecond optical pulses in midinfrared intersubband semiconductor optical amplifiers/
|
Tang, J M
|
American Institute of Physics
|
2000
|
|
|
|
| 33 |
|
Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model/
|
Lahbabi, M
|
American Institute of Physics
|
2000
|
|
|
|
| 34 |
|
Analysis and application to superconducting quantum interference devices of double barrier superconducting junctions/
|
Nakayama, A
|
American Institute of Physics
|
2000
|
|
|
|
| 35 |
|
Analysis of a transient region during the initial stage of atomic layer deposition/
|
Lim, Jung-Wook
|
American Institute of Physics
|
2000
|
|
|
|
| 36 |
|
Analysis of discretization in the direct simulation Monte Carlo/
|
Hadjiconstantinou, Nicolas G
|
American Institute of Physics
|
2000
|
|
|
|
| 37 |
|
Analysis of dislocation mechanism for melting of elements: Pressure dependence/
|
Burakovsky, Leonid
|
American Institute of Physics
|
2000
|
|
|
|
| 38 |
|
Analysis of spatial light modulation characteristics of C60/
|
Roy, Sukhdev
|
American Institute of Physics
|
2000
|
|
|
|
| 39 |
|
Analysis of the Hall effect device using an anisotropic material/
|
Shibata, Hisashi
|
American Institute of Physics
|
2000
|
|
|
|
| 40 |
|
Analytical modeling of stress-induced leakage currents in 5.1-9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling/
|
Lenski, Markus
|
American Institute of Physics
|
2000
|
|
|
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