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Semiconductors I: Bulk - Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1 - xInxAsySb1 - y/GaSb (0.07 <= x <= 0.22, 0.05 <= y <= 0.19) quaternary alloys using infrared photoreflectance/ / Mu�z, Mart� / Published for the American Physical Society by the American Institute of Physics / Physical review . B , Condensed matter / 16600-16604p. / 2000
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