381 |
|
Alternating current losses in biaxially textured YBa~2Cu~3O~7~-~�films deposited on Ni tapes
|
Kerchner, H. R
|
American Institute of Physics
|
1980
|
|
|
382 |
|
Alternating current magnetic susceptibility measurements in La~1~-~xSr~xCoO~3 (x�.30) below 300 K
|
Mira, J
|
American Institute of Physics
|
1980
|
|
|
383 |
|
Alternating current susceptibility studies of Tb ordering in Pb~2Sr~2TbCu~3O~8
|
Wu, S. Y
|
American Institute of Physics
|
1980
|
|
|
384 |
|
Alternative approach to electroless Cu metallization of AlN by a nonaqueous polyol process
|
Chow, G. M
|
American Institute of Physics
|
1980
|
|
|
385 |
|
Alternative electrostatic Green's function for a long tube/
|
Barlow, S. E
|
American Institute of Physics
|
2003
|
|
|
386 |
|
Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate
|
Cheng, L
|
American Institute of Physics
|
1980
|
|
|
387 |
|
Alternative statistical-mechanical descriptions of decaying two-dimensional turbulence in terms of "patches" and "points"/
|
Yin, Z
|
American Institute of Physics
|
2003
|
|
|
388 |
|
Al/Ti~xW~1~-~x metal/diffusion-barrier bilayers: Interfacial reaction pathways and kinetics during annealing
|
Bergstrom, D. B
|
American Institute of Physics
|
1980
|
|
|
389 |
|
Aluminide formation in polycrystalline Al/W metal/barrier thin-film bitayers: Reaction paths and kinetics
|
Bergstrom, D. B
|
American Institute of Physics
|
1980
|
|
|
390 |
|
ALUMINUM ABUNDANCES, DEEP MIXING, AND THE BLUE-TAIL SECOND-PARAMETER EFFECT IN THE GLOBULAR CLUSTERS M3 AND M13/
|
Cavallo, Robert M
|
American Institute of Physics
|
2000
|
|
|
391 |
|
Aluminum and GaN contacts on Si(111) and sapphire/
|
Zhao, Z M
|
American Institute of Physics
|
2000
|
|
|
392 |
|
Aluminum-doped n-type ZnSTe alloy grown by molecular beam epitaxy
|
Sou, I. K
|
American Institute of Physics
|
1980
|
|
|
393 |
|
Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection
|
Jelen, C
|
American Institute of Physics
|
1980
|
|
|
394 |
|
Aluminum impurities in silicon: Investigation of x-ray Raman scattering in total reflection x-ray fluorescence spectroscopy/
|
Baur, K
|
American Institute of Physics
|
2000
|
|
|
395 |
|
Aluminum-induced crystallization and counter-doping of phosphorous-dopedhydrogenated amorphous silicon at low temperatures
|
Haque, M. S
|
American Institute of Physics
|
1980
|
|
|
396 |
|
Aluminum-induced crystallization of hydrogenated amorphous germanium thin films/
|
Chambouleyron, I
|
American Institute of Physics
|
2001
|
|
|
397 |
|
Aluminum, magnesium, and gold contacts to contamination free n-GaN surfaces/
|
Wu, C I
|
American Institute of Physics
|
2001
|
|
|
398 |
|
Aluminum oxynitride at pressures up to 180 GPa/
|
Sekine, T
|
American Institute of Physics
|
2003
|
|
|
399 |
|
Aluminum-seeded growth of microcrystalline Si thin film onto SnO2 substrate/
|
Lee, Chang Hyun
|
American Institute of Physics
|
2000
|
|
|
400 |
|
Aluminum single-electron nonvolatile floating gate memory cell
|
Chen, C. D
|
American Institute of Physics
|
1980
|
|
|