401 |
|
Al~xGa~1~-~xN (0�x �) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
|
Walker, D
|
American Institute of Physics
|
1980
|
|
|
402 |
|
Ambipolar diffusion coefficient and carrier lifetime in a compressively strained InGaAsP multiple quantum well device
|
Zhu, D. X
|
American Institute of Physics
|
1980
|
|
|
403 |
|
Ambipolar diffusion length and photoconductivity measurements on "midgap" hydrogenated microcrystalline silicon
|
Goerlitzer, M
|
American Institute of Physics
|
1980
|
|
|
404 |
|
Ambipolar magnetic fluctuation-induced heat transport in toroidal devices
|
Terry, P. W
|
American Institute of Physics
|
1980
|
|
|
405 |
|
Amino groups in nucleic acid bases, aniline, aminopyridines, and aminotriazine are nonplanar: Results of correlated ab initio quantum chemical calculations and anharmonic analysis of the aniline inversion motion
|
Bludsky, O
|
American Institute of Physics
|
1980
|
|
|
406 |
|
Ammonia adsorption on MgO(100): A density functional theory study
|
Nakajima, Y
|
American Institute of Physics
|
1980
|
|
|
407 |
|
Amorphic diamond/silicon semiconductor heterojunctions exhibiting photoconductive characteristics/
|
Davanloo, F
|
American Institute of Physics
|
2000
|
|
|
408 |
|
Amorphization and anisotropic fracture dynamics during nanoindentation of silicon nitride: A multimillion atom molecular dynamics study/
|
Walsh, Phillip
|
American Institute of Physics
|
2000
|
|
|
409 |
|
Amorphization and crystallization in high-dose Zn^+-implanted silicon
|
Kalitzova, M
|
American Institute of Physics
|
1980
|
|
|
410 |
|
Amorphization and defect recombination in ion implanted silicon carbide
|
Grimaldi, M. G
|
American Institute of Physics
|
1980
|
|
|
411 |
|
Amorphization induced by ion mixing in Fe-Mo multilayered films: Correlation with the number of metal layers
|
Zhang, Z. J
|
American Institute of Physics
|
1980
|
|
|
412 |
|
Amorphous {100} platelet formation in (100) Si induced by hydrogen plasma treatment
|
Hwang, K.-H
|
American Institute of Physics
|
1980
|
|
|
413 |
|
Amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition at filament temperatures between 1500 and 1900 �
|
Brogueira, P
|
American Institute of Physics
|
1980
|
|
|
414 |
|
Amorphous carbon films prepared by the "dip" technique: Deposition and film characterization/
|
Ray, S. C
|
American Institute of Physics
|
2003
|
|
|
415 |
|
Amorphous carbon nanowires investigated by near-edge-x-ray-absorption-fine-structures/
|
Tang, Y H
|
American Institute of Physics
|
2001
|
|
|
416 |
|
Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics
|
Endo, K
|
American Institute of Physics
|
1980
|
|
|
417 |
|
Amorphous-crystalline transition at the Ir/Si(100) interface/
|
Ouyang, C.-P
|
American Institute of Physics
|
2003
|
|
|
418 |
|
Amorphous films formed by solid-state reaction in an immiscible Y-Mo system and their structural relaxation
|
Chen, Y. G
|
American Institute of Physics
|
1980
|
|
|
419 |
|
Amorphous KNbO~3 thin films with ferroelectriclike properties
|
Xiao, R. F
|
American Institute of Physics
|
1980
|
|
|
420 |
|
Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition
|
Chang, K.-M
|
American Institute of Physics
|
1980
|
|
|