481 |
|
Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN
|
Luther, B. P
|
American Institute of Physics
|
1980
|
|
|
482 |
|
Analysis of a transient region during the initial stage of atomic layer deposition/
|
Lim, Jung-Wook
|
American Institute of Physics
|
2000
|
|
|
483 |
|
Analysis of capacitance-voltage characteristics for two-dimensional multi-conductor in liquid crystal displays
|
Lin, K.-W
|
American Institute of Physics
|
1980
|
|
|
484 |
|
Analysis of cross relaxation between Tm^3^+ ions in PbO-Bi~2O~3-Ga~2O~3-GeO~2 glass/
|
Han, Y. S
|
American Institute of Physics
|
2003
|
|
|
485 |
|
Analysis of current fluctuations in silicon pn^+ and p^+n homojunctions
|
Martin, M. J
|
American Institute of Physics
|
1980
|
|
|
486 |
|
Analysis of dark-line defect growth suppression in In~xGa~1~-~xAs/GaAs strained heterostructures
|
Wang, H
|
American Institute of Physics
|
1980
|
|
|
487 |
|
Analysis of discretization in the direct simulation Monte Carlo/
|
Hadjiconstantinou, Nicolas G
|
American Institute of Physics
|
2000
|
|
|
488 |
|
Analysis of dislocation mechanism for melting of elements: Pressure dependence/
|
Burakovsky, Leonid
|
American Institute of Physics
|
2000
|
|
|
489 |
|
Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors/
|
Joshi, R. P
|
American Institute of Physics
|
2003
|
|
|
490 |
|
Analysis of dynamical and nondynamical components of electron correlation energy by means of local-scaling density-functional theory
|
Valderrama, E
|
American Institute of Physics
|
1980
|
|
|
491 |
|
Analysis of eddy current loss in Mn-Zn ferrites for power supplies
|
Yamada, S
|
American Institute of Physics
|
1980
|
|
|
492 |
|
Analysis of electromagnetic oscillations in dielectric cathode with grid electrodes/
|
Hayashi, Y
|
American Institute of Physics
|
2003
|
|
|
493 |
|
Analysis of extremely low frequency brain magnetic fiels associated withshort-term memory and recognition processes (abstract)
|
Yoshida, H
|
American Institute of Physics
|
1980
|
|
|
494 |
|
Analysis of field emission characteristics of hydrogen-adsorbed silicon surface
|
Sung Ho Jo
|
American Institute of Physics
|
1980
|
|
|
495 |
|
Analysis of four wave mixing in slab waveguide under the undepleted pumpapproximation
|
Yokota, M
|
American Institute of Physics
|
1980
|
|
|
496 |
|
Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells/
|
Kyhm, K
|
American Institute of Physics
|
2001
|
|
|
497 |
|
Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds
|
Moreno, J. A
|
American Institute of Physics
|
1980
|
|
|
498 |
|
Analysis of grain-boundary structure in Al-Cu interconnects
|
Field, D. P
|
American Institute of Physics
|
1980
|
|
|
499 |
|
Analysis of grating light valves with partial surface electrodes
|
Furlani, E. P
|
American Institute of Physics
|
1980
|
|
|
500 |
|
Analysis of heat transfer from single wires close to walls/
|
Shi, J.-M
|
American Institute of Physics
|
2003
|
|
|