1101 |
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Atomic force microscopy for high speed imaging using cantilevers with anintegrated actuator and sensor
|
Manalis, S. R
|
American Institute of Physics
|
1980
|
|
|
1102 |
|
Atomic force microscopy for the determination of refractive index profiles of optical fibers and waveguides: A quantitative study
|
Huntington, S. T
|
American Institute of Physics
|
1980
|
|
|
1103 |
|
Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization
|
Ferro, G
|
American Institute of Physics
|
1980
|
|
|
1104 |
|
"Atomic force microscopy imaging of viscoelastic properties in toughenedpolypropylene resins" [J. Appl. Phys. 78, 5956 (1995)]
|
Nysten, B
|
American Institute of Physics
|
1980
|
|
|
1105 |
|
Atomic force microscopy-induced electric field in ferroelectric thin films/
|
Wang, B
|
American Institute of Physics
|
2003
|
|
|
1106 |
|
Atomic force microscopy of selenium sulfide passivated GaAs (100) surface
|
Kuruvilla, B. A
|
American Institute of Physics
|
1980
|
|
|
1107 |
|
Atomic force microscopy study of plastic deformation and interfacial sliding in Al thin film: Si substrate systems due to thermal cycling/
|
Chen, M W
|
American Institute of Physics
|
2000
|
|
|
1108 |
|
Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition
|
Capellini, G
|
American Institute of Physics
|
1980
|
|
|
1109 |
|
Atomic hydrogen cleaning of GaSb(001) surfaces
|
Bell, G. R
|
American Institute of Physics
|
1980
|
|
|
1110 |
|
Atomic hydrogen enhanced reflow of copper
|
Miyake, T
|
American Institute of Physics
|
1980
|
|
|
1111 |
|
Atomic layer chemical vapor deposition of ZrO~2-based dielectric films: Nanostructure and nanochemistry/
|
Dey, S. K
|
American Institute of Physics
|
2003
|
|
|
1112 |
|
Atomic layer controlled deposition of silicon nitride with self-limitingmechanism
|
Goto, H
|
American Institute of Physics
|
1980
|
|
|
1113 |
|
Atomic layer controlled growth of SiO~2 films using binary reaction sequence chemistry
|
Klaus, J. W
|
American Institute of Physics
|
1980
|
|
|
1114 |
|
Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors/
|
Nakajima, Anri
|
American Institute of Physics
|
2000
|
|
|
1115 |
|
Atomic layer epitaxial predeposition for GaAs growth on Si
|
Das, U
|
American Institute of Physics
|
1980
|
|
|
1116 |
|
Atomic layer epitaxy of CdTe and MnTe
|
Hartmann, J. M
|
American Institute of Physics
|
1980
|
|
|
1117 |
|
Atomic layer graphoepitaxy for single crystal heterostructures
|
Wallis, D. J
|
American Institute of Physics
|
1980
|
|
|
1118 |
|
Atomic level stress and light emission of Ce activated SrS thin films
|
Warren, W. L
|
American Institute of Physics
|
1980
|
|
|
1119 |
|
Atomic magnetic moments and spin notion
|
Oudet, X
|
American Institute of Physics
|
1980
|
|
|
1120 |
|
Atomic migration in Ni-Co ferrite
|
Chul Sung Kim
|
American Institute of Physics
|
1980
|
|
|