1121 |
|
Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio
|
Kimura, K
|
American Institute of Physics
|
1980
|
|
|
1122 |
|
Atomic origin of deep levels in p-type GaN: Theory
|
Chadi, D. J
|
American Institute of Physics
|
1980
|
|
|
1123 |
|
Atomic resolution x-ray hologram
|
Xu, G
|
American Institute of Physics
|
1980
|
|
|
1124 |
|
Atomic scale characterization of oxygen vacancy segregation at SrTiO3 grain boundaries/
|
Klie, R F
|
American Institute of Physics
|
2000
|
|
|
1125 |
|
Atomic-scale graded structure formed by sedimentation of substitutional atoms in a Bi-Sb alloy/
|
Mashimo, Tsutomu
|
American Institute of Physics
|
2001
|
|
|
1126 |
|
Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics/
|
Muller, David A
|
American Institute of Physics
|
2001
|
|
|
1127 |
|
Atomic-scale nature of the (3 x 3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy
|
Gwo, S
|
American Institute of Physics
|
1980
|
|
|
1128 |
|
Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface/
|
Lenahan, P M
|
American Institute of Physics
|
2001
|
|
|
1129 |
|
Atomic scale simulation of defect production in irradiated 3C-SiC/
|
Devanathan, R
|
American Institute of Physics
|
2001
|
|
|
1130 |
|
Atomic-scale structure and electronic properties of GaN/GaAs superlattices
|
Goldman, R. S
|
American Institute of Physics
|
1980
|
|
|
1131 |
|
Atomic-scale study of GaMnAs/GaAs layers/
|
Grandidier, B
|
American Institute of Physics
|
2000
|
|
|
1132 |
|
Atomic scale study of the interaction between misfit dislocations at theGaAs/Si interface
|
Vila, A
|
American Institute of Physics
|
1980
|
|
|
1133 |
|
Atomic steps on a silicon (001) surface tilted toward an arbitrary direction
|
Zhong, L
|
American Institute of Physics
|
1980
|
|
|
1134 |
|
Atomic stress isobaric scaling for systems subjected to holonomic constraints
|
Melchionna, S
|
American Institute of Physics
|
1980
|
|
|
1135 |
|
Atomic structure of random and c-axis oriented YMnO~3 thin films deposited on Si and Y~2O~3/Si substrates/
|
Kim, Y. T
|
American Institute of Physics
|
2003
|
|
|
1136 |
|
Atomic structure of the CdTe(001) C(2x2) reconstructed surface: A grazing incidence x-ray diffraction study
|
Veron, M. B
|
American Institute of Physics
|
1980
|
|
|
1137 |
|
Atomic structures at a Si-nitride/Si(001) interface/
|
Ikarashi, Nobuyuki
|
American Institute of Physics
|
2001
|
|
|
1138 |
|
Atomistic analysis of defect evolution and transient enhanced diffusion in silicon/
|
Aboy, M
|
American Institute of Physics
|
2003
|
|
|
1139 |
|
Atomistic calculations of defects in ZnGeP~2
|
Zapol, P
|
American Institute of Physics
|
1980
|
|
|
1140 |
|
Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
|
Jaraiz, M
|
American Institute of Physics
|
1980
|
|
|